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The BAT6406E6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, housed in an SOT-23-3 surface-mount package. It features a single diode configuration with a maximum repetitive reverse voltage of 40 V and a forward current rating of 120 mA. The device exhibits a typical forward voltage of 570 mV and a maximum reverse leakage current of 2 uA. It supports a forward surge current of 800 mA and operates within a temperature range of -55 C to +150 C, dissipating up to 250 mW of power.
Verify the specific ordering suffix E6327HTSA1 to ensure correct tape-and-reel packaging quantities and manufacturing lot codes. Confirm RoHS compliance status and automotive qualification requirements against the latest official datasheet before finalizing procurement specifications.
Select this component when a low-capacitance, fast-switching Schottky diode is required in space-constrained designs. Ensure the circuit's peak reverse voltage remains below 40 V and continuous current does not exceed 120 mA. Consider the 150 C operating limit for high-temperature environments compared to standard silicon PN junctions.
This part belongs to the BAS/BAT series of small-signal Schottky diodes from Infineon. These components are widely used in consumer electronics and industrial control systems where speed and low loss are critical. The SOT-23-3 package allows for automated assembly in dense PCB layouts.
The maximum operating junction temperature is +150 C.
No, it is exclusively available in the SOT-23-3 surface-mount package.
The typical forward voltage (Vf) is 570 mV.