RF Diode BAT6804WH6327XTSA1 product image

BAT6804WH6327XTSA1

$0.48
  • Description:DIODE SCHOTTKY 8V 150MW SOT323-3
  • Series:-

SKU:d12ef2b9b267 Category: Brand:

  
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BAT6804WH6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 8V 150MW SOT323-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT6804WH6327XTSA1

  • Description:DIODE SCHOTTKY 8V 150MW SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):8V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:1pF @ 0V, 1MHz
  • Resistance @ If, F:10Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT6804WH6327XTSA1

BAT6804WH6327XTSA1

RF Diode Overview

The BAT6804WH6327XTSA1 is a silicon Schottky diode from the Infineon BAT68 series, housed in an SOT-323-3 surface-mount package. It features a dual series configuration with a maximum reverse voltage of 8 V and a forward current rating of 130 mA. The device exhibits a typical forward voltage of 390 mV at 10 mA and a maximum reverse current of 1.2 µA at 60 °C. Electrical characteristics include a diode capacitance of 1 pF at 1 MHz and a differential forward resistance of 10 Ω at 10 kHz. Total power dissipation is rated at 150 mW, with a junction temperature range spanning from -55 °C to +150 °C.

RF Diode Feature Summary

  • Designed for mixer applications within the VHF and UHF frequency ranges
  • Optimized for high-speed switching operations
  • Manufactured using lead-free processes compliant with RoHS standards

RF Diode Applications

  • Mixer circuits operating in the VHF / UHF range
  • High-speed switching applications

RF Diode Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and ordering suffix against official Infineon documentation. Confirm that the specific H6327 tape-and-reel packaging matches project requirements. Ensure compliance with RoHS directives and verify thermal handling specifications during assembly to maintain junction temperature limits.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky barrier is required for RF mixing or fast switching. The dual series configuration allows for specific circuit topologies without requiring multiple discrete components. Evaluate the 8 V reverse voltage limit and 150 mW power dissipation against the expected load conditions to ensure reliable operation within the specified temperature range.

RF Diode Part Context

This component belongs to the BAT68 series of silicon Schottky diodes produced by Infineon Technologies. The series includes various configurations such as single, common anode, parallel pair, and parallel triple arrangements across packages like SOT23, SOT323, SOT343, and SOT363. The BAT6804 variant specifically utilizes the SOT323 package with a dual series internal structure.

RF Diode Replacement Considerations

Direct substitutes within the same series include BAT6806WH6327XTSA1 (common anode) and BAT6808S (parallel triple). Other variants like BAT68-04 or BAT68-06 share similar electrical ratings but differ in package type or internal configuration.

BAT6804WH6327XTSA1BAT6804WH6327XTSA1
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