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The BAT721S-Q is a planar Schottky barrier dual diode featuring an integrated guard ring for stress protection, encapsulated in a SOT23 small Surface-Mounted Device plastic package. It operates with a maximum reverse voltage of 40 V and a continuous forward current of 200 mA per diode. The device exhibits a typical forward voltage of 550 mV at 200 mA and a capacitance of 40 pF at 0 V reverse bias. Qualified according to AEC-Q101, it supports junction temperatures up to 125 °C and ambient temperatures ranging from -65 °C to 150 °C.
Verify the specific suffix 'QR' against the manufacturer's official documentation to confirm reel packaging specifications and manufacturing site codes. Ensure the selected component matches the required automotive qualification standards and package dimensions defined in the product data sheet before finalizing procurement orders.
Select this component for designs requiring low forward voltage and minimal capacitance in compact surface-mount layouts. Confirm that the 40 V reverse voltage and 200 mA forward current ratings align with circuit requirements. Verify thermal management needs, as reverse power losses can be significant in certain operating conditions.
This part belongs to the Nexperia BAT721 series of Schottky barrier diodes. These devices are designed for high-speed switching applications within small SMD packages. The series integrates a guard ring to enhance stress protection, making them suitable for robust electronic designs where space constraints and switching speed are critical factors.
BAT721C,215
Pin 1 is Anode 1 (A1), Pin 2 is Cathode 2 (K2), and Pin 3 serves as both Cathode 1 (K1) and Anode 2 (A2).
Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum non-repetitive peak forward current (IFSM) is 1 A under half sine-wave pulse conditions with a duration of 8.3 ms.