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The BAT74,235 is a planar Schottky barrier double diode featuring an integrated guard ring for stress protection. It encapsulates two electrically isolated Schottky barrier diodes in a small SOT143B Surface-Mounted Device plastic package. The device supports a forward current of 200 mA per diode and a reverse voltage of 30 V. Forward voltage reaches 800 mV at 100 mA, with a non-repetitive peak forward current of 600 mA. Total power dissipation is 230 mW at 25 °C ambient temperature, operating within a junction temperature range up to 125 °C.
Verify the specific ordering suffix matches the required manufacturing origin and tape/reel configuration. Confirm RoHS compliance status and lead times through official Nexperia channels or authorized distributors before finalizing procurement plans.
Select this component for applications requiring dual Schottky isolation in a compact footprint. Ensure thermal management accommodates the 230 mW total power dissipation limit. Verify that the 30 V reverse voltage rating exceeds the maximum circuit operating voltage under all conditions.
This part belongs to the Nexperia BAT74 series of Schottky barrier double diodes. It utilizes planar technology with an integrated guard ring to enhance reliability against electrical stress. The SOT143B package provides a standardized surface-mount solution for space-constrained designs.
BAT74S,115 (SOT363 package)
Pin 1 is the cathode for diode 1, Pin 2 is the cathode for diode 2, Pin 3 is the anode for diode 2, and Pin 4 is the anode for diode 1.
The maximum repetitive peak forward current is 300 mA per diode with a pulse width less than or equal to 1 second and a duty cycle less than or equal to 0.5.
If both diodes are in forward operation simultaneously, the total device current is limited to a maximum of 110 mA.