ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：DIODE ARRAY GP 80V 200MA PGSOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Diode Configuration：1 Pair Series Connection
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：80 V
- Current - Average Rectified (Io) (per Diode)：200mA
- Voltage - Forward (Vf) (Max) @ If：1.25 V @ 150 mA
- Speed：Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr)：1.5 µs
- Current - Reverse Leakage @ Vr：5 nA @ 75 V
- Operating Temperature - Junction：150°C (Max)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
Download product information
Overview
The BAV199B6327 is a silicon low-leakage diode from the BAV199 series, manufactured by Infineon Technologies. It features a series pair configuration within an SOT-23 package and is qualified according to AEC-Q101 standards. The device supports a maximum reverse voltage of 80 V and a peak reverse voltage of 85 V. It handles a forward current of 200 mA with a non-repetitive peak surge current of 4.5 A at 1 µs. Electrical characteristics include a breakdown voltage of 85 V, a maximum reverse current of 80 nA at 150 °C, and a typical reverse recovery time of 0.6 µs.
Feature Summary
- Series pair configuration for dual-diode applications
- Low-leakage performance suitable for sensitive circuits
- Qualified for automotive environments per AEC-Q101
Applications
- Low-leakage signal processing
- Medium-speed switching circuits
- Automotive electronic modules
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required package and qualification standards. Ensure compliance with RoHS directives as indicated in the datasheet. Check for any special requests regarding Pb-containing packages if applicable. Validate supply chain documentation against the manufacturer's records.
Selection Notes
Select this component for designs requiring low leakage currents and medium-speed switching capabilities. The AEC-Q101 qualification makes it suitable for automotive applications. Consider the SOT-23 package size for space-constrained layouts. Evaluate thermal resistance parameters for power dissipation requirements under operating conditions.
Part Context
This part belongs to the BAV199 series of silicon low-leakage diodes. It is designed for general-purpose switching and rectification tasks where low reverse current is critical. The series includes various package options and configurations to meet diverse design needs.
Replacement Considerations
BAV199E6327HTSA1
FAQ
What is the maximum reverse voltage rating?
The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.
Is the component qualified for automotive use?
Yes, the BAV199 series is qualified according to the AEC-Q101 standard.
What is the typical reverse recovery time?
The typical reverse recovery time (trr) is 0.6 µs when measured under specified test conditions.
