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The BAV70S E6433 is a silicon switching diode manufactured by Infineon Technologies, designed for high-speed signal processing applications. It features a dual common cathode configuration housed in an SOT-23-3 surface-mount package. Key electrical parameters include a peak reverse voltage of 85 V and a maximum forward current of 200 mA. The device exhibits a fast recovery time of 4 ns and a low forward voltage of 1.25 V at rated current. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification for automotive reliability standards.
Verify the specific suffix E6433 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm current production status as some variants may be subject to obsolescence notices. Ensure compatibility with existing PCB footprint designs utilizing the SOT-23-3 package before finalizing procurement orders.
Select this component when a dual common cathode topology is required for space-constrained designs. The AEC-Q100 qualification makes it suitable for automotive systems requiring robust performance under varying thermal conditions. Compare the 4 ns recovery time against application requirements to ensure adequate speed for high-frequency signals without unnecessary cost overhead.
This part belongs to the BAV70 series of small-signal switching diodes from Infineon Technologies. The series is widely used in digital and analog switching applications due to its compact size and reliable performance. The E6433 suffix denotes specific manufacturing and packaging details within this product line.
BAV70E6433HTMA1
The BAV70S contains two independent diodes connected in a common cathode configuration within a single SOT-23-3 package.
Yes, the component meets the AEC-Q100 stress test qualification requirements for automotive electronic components.
The maximum operating junction temperature for the BAV70S is +150°C.