BAV116T-7

Overview

The BAV116T-7 is an ultra-low leakage surface mount diode manufactured by Diodes Incorporated. It features a peak repetitive reverse voltage of 85 V and a forward continuous current rating of 200 mA. The device dissipates up to 280 mW with a thermal resistance junction-to-ambient of 450 °C/W. Electrical characteristics include a maximum reverse leakage current of 5 nA at 75 V, a typical total capacitance of 1.2 pF, and a reverse recovery time of 0.6 µs. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• Ultra-low reverse leakage current for sensitive circuit applications
• Low total capacitance suitable for high-frequency signal processing
• Totally lead-free and fully RoHS compliant construction

Applications

• Ultra-low leakage current applications
• High-speed switching circuits
• Signal processing in consumer electronics

Procurement Notes

Verify the specific ordering suffix '-7' against official manufacturer documentation to confirm tape and reel packaging quantities. Ensure compliance requirements such as RoHS and halogen-free status match project specifications. Confirm that the SOD523 package dimensions align with the intended PCB footprint layout before finalizing procurement orders.

Selection Notes

Select this component when low reverse leakage and fast switching speeds are critical design parameters. The SOD523 package offers a compact solution for space-constrained designs. Evaluate the thermal resistance and power dissipation limits relative to the expected ambient operating conditions to ensure reliable performance under load.

Part Context

This part belongs to the BAV116 series of small-signal switching diodes produced by Diodes Incorporated. It utilizes a molded plastic case with matte tin annealed terminals over an alloy leadframe. The marking code 'T6' identifies the product type on the top view of the SOD523 package.

Replacement Considerations

Consult official datasheets for cross-reference data. Verify electrical parameters such as reverse breakdown voltage, forward voltage, and leakage current against potential substitutes to ensure functional equivalence in the target application.