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The BAV170HMFHT116 is a low-leakage switching diode manufactured by ROHM Semiconductor, housed in an SSD3 (SOT-23) surface-mount package. It features a common cathode configuration with two internal elements. Key electrical parameters include a repetitive peak reverse voltage of 90 V and a reverse voltage rating of 80 V. The device supports a forward current of 215 mA per diode and a peak forward surge current of 4000 mA. Junction temperature ranges from -65°C to 150°C.
Verify the component status before procurement as this specific part number is marked Not Recommended for New Designs. Confirm that the SSD3 package and T116 taping code match your manufacturing requirements. Ensure compliance with RoHS directives and AEC-Q101 qualification standards during the sourcing process.
Select this component for designs requiring low leakage and high reliability in a compact SOT-23 footprint. Consider the 80V reverse voltage rating and 215mA continuous forward current limits when designing the circuit. Verify thermal management capabilities given the 250mW power dissipation limit at 25°C ambient temperature.
This device belongs to ROHM's line of epitaxial planar switching diodes designed for surface mount technology. It is specifically qualified under the AEC-Q101 standard for automotive grade reliability. The product utilizes a small mold type package to facilitate automated insertion and space-constrained board layouts.
BAV170HYFH is listed as a similar level replacement with the same pinout and package.
The maximum junction temperature is 150°C.
Yes, it is AEC-Q101 qualified and designed for high reliability in automotive environments.
The reverse recovery time is typically 3.0 μs under specified test conditions.