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The Nexperia BAV170MYL is a dual common cathode low-leakage diode encapsulated in a leadless ultra-small DFN1006-3 (SOT883) surface-mounted device plastic package. It features a repetitive peak reverse voltage of 85 V and a maximum forward current of 320 mA per diode. The device exhibits a typical reverse recovery time of 0.8 µs and a low leakage current of 3 pA at 75 V reverse bias. Operating temperatures range from -55 °C to +150 °C, with a total power dissipation of 325 mW.
Verify the specific ordering suffix MYL against the manufacturer's official documentation to confirm reel packaging specifications and marking codes. Ensure compatibility with standard reflow soldering profiles for the DFN1006-3 footprint. Confirm that the component meets the required AEC-Q101 qualification status for intended automotive or industrial deployment scenarios.
Select this component when circuit designs require minimal reverse leakage current alongside fast switching capabilities. The dual common cathode configuration allows for efficient space-saving layouts in compact electronic assemblies. Consider the thermal resistance characteristics and derating curves when designing for high ambient temperature environments or continuous load conditions.
This part belongs to the Nexperia BAV170M series of small-signal switching diodes. It shares the same internal die and electrical characteristics as the standard BAV170M but utilizes the DFN1006-3 package variant. The series is designed for general-purpose rectification and signal processing tasks requiring low capacitance and high reliability.
Direct substitutes include other dual common cathode low-leakage diodes in compatible packages. Verify pinout alignment and electrical limits before substitution. Cross-reference with similar Nexperia variants if package availability is constrained.