SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia BAV170QA-Q is a dual common cathode low-leakage switching diode housed in a leadless DFN1010D-3 (SOT1215) package. It features a repetitive peak reverse voltage of 85 V and a maximum forward current of 320 mA per diode. The device exhibits a typical reverse recovery time of 0.8 µs and a low capacitance of 2 pF. Operating temperatures range from -55 °C to +150 °C, with a junction temperature limit of 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and marking codes. Confirm AEC-Q101 qualification status if automotive reliability is required. Ensure design compatibility with the DFN1010D-3 footprint dimensions and soldering requirements specified in the datasheet.
Select this component for designs requiring minimal footprint and high-speed switching capabilities. The low leakage current makes it suitable for sensitive signal paths. Verify that the thermal resistance characteristics align with the application's heat dissipation needs on the FR4 PCB.
This part belongs to Nexperia's automotive-grade switching diode portfolio. It utilizes silicon junction technology optimized for miniaturization. The leadless package design enhances thermal performance and solder joint visibility compared to traditional plastic packages.
BAV170MYL
The BAV170QA-Q is encapsulated in a leadless ultra-small DFN1010D-3 (SOT1215) SMD plastic package.
Yes, the product is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
The maximum junction temperature (Tj) for the BAV170QA-Q is 150 °C.