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The Nexperia BAV170VL is a low-leakage double diode featuring an epitaxial medium-speed switching design in a small SOT23 plastic surface-mounted device package. The internal diodes are configured in a common cathode arrangement. Key electrical parameters include a maximum continuous reverse voltage of 75 V and a repetitive peak reverse voltage of 85 V. The typical leakage current is 3 pA, with a maximum of 5 nA at 75 V. It supports a repetitive peak forward current of 500 mA and a non-repetitive surge current up to 4 A. The junction temperature range extends from -55 °C to +150 °C.
Verify the specific ordering suffix 'VL' against the official Nexperia datasheet or authorized distributor catalogs to confirm availability and exact packaging specifications. Confirm that the component meets the required automotive or industrial qualification standards, as standard versions may differ from qualified variants. Ensure compatibility with the intended PCB footprint and soldering process before finalizing procurement orders.
Select this component for designs requiring minimal reverse leakage current in compact surface-mount layouts. The common cathode configuration simplifies circuit topology for dual-diode requirements. Evaluate thermal resistance limits under high ambient temperatures to ensure reliable operation within the specified junction temperature range.
This component belongs to the Nexperia BAV170 series of low-leakage switching diodes. It utilizes a silicon epitaxial structure optimized for medium-speed applications. The SOT23 package provides a compact form factor ideal for space-constrained electronic designs requiring reliable signal switching with minimal parasitic effects.
BAV170HM
Pin 1 is Anode 1 (A1), Pin 2 is Anode 2 (A2), and Pin 3 is Common Cathode (CC).
The maximum repetitive peak reverse voltage is 85 V.
No, this specific product data sheet indicates it is not automotive qualified. Automotive-qualified alternatives should be consulted separately.