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The BAV19 is a dual silicon switching diode manufactured by Taiwan Semiconductor Corporation, housed in the SOT-23 surface-mount package. It features two internally connected elements with a center tap configuration. The device supports a maximum average forward current of 0.2 A and withstands a repetitive peak reverse voltage of 80 V. Key electrical characteristics include a maximum reverse recovery time of 1.5 µs, a forward voltage drop of 1.25 V at 150 mA, and a low reverse leakage current of 5 nA at 75 V. It operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 330 mW.
Verify the specific manufacturer datasheet for the exact electrical limits and thermal resistance values. Confirm RoHS compliance status and packaging options such as cut tape or reel quantities directly with authorized distributors. Ensure the component meets the required automotive qualification standards if used in vehicle applications.
Select this component when a dual diode configuration with a common cathode or anode is required in a compact SOT-23 footprint. Consider its 80 V reverse voltage rating and 0.2 A current capacity against circuit demands. Evaluate the 1.5 µs reverse recovery time for suitability in high-speed switching environments compared to faster alternatives.
This component belongs to the BAV series of small-signal switching diodes designed for general-purpose applications. It utilizes silicon planar technology to ensure stable performance across varying temperatures. The SOT-23 package provides a space-saving solution for modern printed circuit board designs requiring reliable semiconductor switching elements.
Compatible substitutes include the BAV199 and BAV199W from other manufacturers, which offer similar dual configurations. Verify that replacement parts match the 80 V reverse voltage and 0.2 A forward current specifications. Ensure the alternative components are available in the SOT-23 package type for direct pin-compatible installation.