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Product Detailed Parameters
- Description：DIODE STD 100V 250MA DO204AH
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：100 V
- Current - Average Rectified (Io)：250mA
- Voltage - Forward (Vf) (Max) @ If：1 V @ 100 mA
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：50 ns
- Current - Reverse Leakage @ Vr：100 nA @ 100 V
- Capacitance @ Vr, F：1.5pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-204AH (DO-35)
- Operating Temperature - Junction：175°C (Max)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BAV19-TR is a small signal switching diode manufactured by Vishay Semiconductors. It features a silicon epitaxial planar construction housed in a DO-35 (DO-204AH) glass axial leaded case. The device has a maximum repetitive peak reverse voltage of 120 V and a forward continuous current rating of 250 mA. Electrical characteristics include a maximum reverse current of 100 nA at 100 V, a typical diode capacitance of 1.5 pF at 0 V and 1 MHz, and a reverse recovery time of 50 ns.
Feature Summary
- Utilizes silicon epitaxial planar technology for high-voltage switching applications
- Provides fast switching performance with a 50 ns reverse recovery time
- Features low leakage current and minimal junction capacitance
Applications
- General purpose switching circuits
- High voltage signal processing
- Clamping and protection applications
Procurement Notes
Verify the specific ordering code suffix to confirm packaging configuration. The -TR designation indicates tape and reel packaging on a 14-inch reel, while -TAP denotes ammopack options. Confirm that the component meets RoHS compliance standards as defined by Vishay material categorization guidelines before finalizing procurement specifications.
Selection Notes
Select this component when a single diode with a 120 V reverse voltage rating is required. Ensure the application operates within the specified thermal resistance limits and does not exceed the 500 mW power dissipation capability. Verify that the axial leaded package form factor aligns with the target PCB layout requirements.
Part Context
This part belongs to the BAV17 through BAV21 series of small signal switching diodes. All variants share identical physical dimensions and electrical parameters except for their breakdown voltage ratings. The BAV19 specifically provides a 120 V rating, positioned between the lower voltage BAV18 and higher voltage BAV20 models.
Replacement Considerations
Cross-reference with other manufacturers offering DO-35 packaged silicon switching diodes rated for 120 V reverse voltage and similar forward current capabilities. Verify compatibility regarding thermal resistance and package dimensions.
