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The BAV19 is a high-voltage general-purpose silicon switching diode manufactured by onsemi. It features a single internal configuration housed in the DO-35 axial leaded package. The device is rated for a peak reverse voltage of 120 V and supports a maximum forward current of 200 mA. Key electrical characteristics include a low forward voltage drop and fast switching capabilities, making it suitable for applications requiring reliable rectification and signal processing.
Verify the specific ordering suffix (e.g., G) to ensure compliance with RoHS directives and halogen-free requirements. Confirm that the DO-35 package matches your PCB footprint constraints. Ensure the supplier provides valid traceability documentation for quality assurance purposes.
Select this component when a single diode with a 120 V reverse voltage rating is required. It is appropriate for circuits where a 200 mA continuous forward current is sufficient. Consider alternative packages if surface-mount technology is preferred over through-hole mounting.
The BAV19 belongs to onsemi’s portfolio of small-signal diodes, which also includes the BAV20 and BAV21 series. These devices share similar structural designs but differ in internal configurations, such as dual common-anode or common-cathode arrangements, whereas the BAV19 is a single unit.
Direct substitutes include the BAV20 and BAV21, though these feature dual-diode configurations rather than a single diode. Verify pinout compatibility and electrical ratings before substituting with generic equivalents from other manufacturers.