BAV199-7-G

BAV199-7-G

  • Description:DIODE GEN PURPOSE
  • Series:*

SKU:affc4e2a2595 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE GEN PURPOSE
  • Series:*
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Diode Configuration:-
  • Technology:-
  • Voltage - DC Reverse (Vr) (Max):-
  • Current - Average Rectified (Io) (per Diode):-
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Operating Temperature - Junction:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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BAV199-7-G

Overview

The BAV199-7-G is a small-signal switching diode manufactured by Diodes Incorporated, housed in an SOT-323-3 surface-mount package. It features a dual series-connected configuration with a maximum repetitive peak reverse voltage of 85V and an average forward rectified current of 160mA. Key electrical parameters include a reverse recovery time of 3µs, a maximum reverse leakage current of 5nA, and a total capacitance of 2pF. The device supports a wide operating temperature range from -65°C to +150°C and is qualified under the AEC-Q101 automotive standard.

Feature Summary

  • Dual series-connected internal structure for high-voltage clamping applications
  • Low reverse leakage current suitable for precision circuits
  • Automotive-grade reliability certified to AEC-Q101 standards

Applications

  • Automotive electronic systems requiring robust signal switching
  • High-precision instrumentation utilizing low-leakage characteristics
  • General-purpose signal processing and protection circuits

Procurement Notes

Verify the specific suffix '-G' against official manufacturer documentation to confirm RoHS compliance status and exact pinout configuration. Ensure that the sourcing channel provides valid traceability for AEC-Q101 qualified components intended for automotive or industrial deployment. Cross-reference datasheet revisions to confirm parameter consistency.

Selection Notes

Select this component when a dual-series diode configuration is required within a compact SOT-323 footprint. The low leakage and high breakdown voltage make it distinct from standard dual Schottky or parallel arrays. Verify thermal management requirements against the specified power dissipation limits for the target application environment.

Part Context

This part belongs to the BAV199 family of silicon switching diodes designed for general-purpose applications. The 'W' or '-G' suffix typically denotes specific packaging or environmental compliance variations within the Diodes Incorporated portfolio. It serves as a compact alternative to through-hole equivalents while maintaining similar electrical performance profiles for signal handling.

Replacement Considerations

BAV199T-7-F

FAQ

What is the internal configuration of the BAV199-7-G?

The device contains two diodes connected in series within a single SOT-323-3 package.

Is the BAV199-7-G suitable for automotive applications?

Yes, the component is qualified according to the AEC-Q101 standard for automotive use.

What is the maximum reverse recovery time for this diode?

The maximum reverse recovery time is specified as 3 microseconds.

BAV199-7-GBAV199-7-G

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