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The Nexperia BAV199,235 is a low-leakage double diode featuring two series-connected epitaxial diodes in an SOT-23 surface-mount package. It supports a maximum repetitive peak reverse voltage of 85 V and a continuous forward current of 160 mA per diode. The device exhibits a typical leakage current of 3 nA at 75 V and a junction temperature range from -65 °C to 150 °C. Key electrical characteristics include a typical switching time of 0.8 µs and a peak reverse recovery time of 3 µs.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing site codes. Ensure the selected variant matches the required thermal resistance and power dissipation limits for the intended ambient operating conditions. Confirm that the non-automotive qualification status aligns with the target application requirements before finalizing procurement.
Select this component for designs requiring dual series-connected diodes in a minimal footprint. Evaluate the thermal resistance parameters to ensure adequate heat dissipation under continuous load conditions. Consider the maximum allowable junction temperature when determining derating factors for high-temperature environments or dense PCB layouts.
This component belongs to the BAV199 series of low-leakage double diodes manufactured by Nexperia. It utilizes epitaxial technology to achieve medium-speed switching characteristics within a standard SOT-23 plastic package. The series is designed for general-purpose surface-mount applications where space constraints and low reverse current are critical design parameters.
Consult official Nexperia substitution guides for verified equivalent part numbers. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.