BAV199E6327HTSA1

Q: What is the maximum reverse voltage rating?

The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.

Q: Is this component qualified for automotive use?

Yes, the BAV199E6327HTSA1 is qualified according to the AEC-Q101 standard.

Q: What is the typical reverse recovery time?

The typical reverse recovery time (trr) is 0.6 µs under specified test conditions.

$0.17

Description：DIODE ARRAY GP 80V 200MA PGSOT23
Series：-

SKU:84336797e408 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY GP 80V 200MA PGSOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Configuration：1 Pair Series Connection
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：200mA (DC)
Voltage - Forward (Vf) (Max) @ If：1.25 V @ 150 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：1.5 µs
Current - Reverse Leakage @ Vr：5 nA @ 75 V
Operating Temperature - Junction：150°C (Max)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

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BAV199E6327HTSA1

Overview

The BAV199E6327HTSA1 is a silicon low-leakage diode from Infineon Technologies, housed in an SOT-23 package. It features a series pair configuration with two elements and three pins. The device supports a maximum reverse voltage of 80 V and a peak reverse voltage of 85 V. It handles a continuous forward current of 200 mA and a non-repetitive peak surge current of 4.5 A. Total power dissipation is rated at 330 mW. Electrical characteristics include a typical reverse recovery time of 0.6 µs and a breakdown voltage of 85 V.

Feature Summary

Series pair configuration for dual-diode applications
Low leakage current performance
Qualified according to AEC-Q101 automotive standards

Applications

Low-leakage signal processing circuits
Medium speed switching applications
Automotive electronic systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component meets AEC-Q101 requirements if used in automotive contexts. Ensure thermal management aligns with the specified junction temperature limits during operation.

Selection Notes

Select this component for designs requiring low leakage and medium-speed switching within an SOT-23 footprint. Consider the 80 V reverse voltage rating and 200 mA forward current capability. Verify compatibility with operating temperatures ranging from -65°C to 150°C.

Part Context

This part belongs to the BAV199 series of silicon low-leakage diodes manufactured by Infineon Technologies. The series is designed for general-purpose switching and low-leakage applications. The E6327HTSA1 suffix indicates specific packaging and handling characteristics compliant with RoHS standards.