BAV199E6359HTMA1

Overview

The BAV199E6359HTMA1 is a silicon low leakage diode manufactured by Infineon Technologies. It features a series pair configuration in an SOT-23 package. The device supports a maximum DC reverse voltage of 80 V and a peak reverse voltage of 85 V. It handles a forward current of 200 mA with a non-repetitive peak surge current of 4.5 A at 1 µs. Electrical characteristics include a breakdown voltage of 85 V, a maximum reverse current of 80 nA at 75 V, and a typical reverse recovery time of 0.6 µs. Total power dissipation is rated at 330 mW, with a junction temperature range up to 150 °C.

Feature Summary

• Series pair configuration for dual-diode applications
• Low-leakage performance suitable for sensitive circuits
• Qualified according to AEC Q101 automotive standards

Applications

• Low-leakage signal processing
• Medium speed switching applications
• Automotive electronic systems

Procurement Notes

Verify the specific ordering suffix E6359 against official Infineon documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and ensure the component meets AEC Q101 requirements if used in automotive contexts. Check for any special request conditions regarding Pb-containing packages.

Selection Notes

Select this component for designs requiring a dual diode in a compact SOT-23 footprint. Ensure the circuit operates within the 80 V reverse voltage limit and 200 mA forward current rating. Consider the 0.6 µs reverse recovery time for medium-speed switching needs. Verify thermal management capabilities given the 330 mW power dissipation limit.

Part Context

This part belongs to the BAV199 series of silicon low leakage diodes from Infineon Technologies. The series is characterized by its small-signal switching capabilities and low reverse current. The SOT-23 package provides a surface-mount solution suitable for space-constrained PCB layouts.

Replacement Considerations

BAV199/G33, BAV199/G31, BAV199/G44, BAV199/G32