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The BAV199HMT116 is a low leakage switching diode manufactured by ROHM Semiconductor. It features an epitaxial planar structure housed in an SOT-23 (SSD3) surface-mount package with three terminals. The device supports a repetitive peak reverse voltage of 100 V and a continuous reverse voltage of 80 V. It handles a forward current of 215 mA per diode, with a peak forward surge current capability of 4000 mA. Key electrical characteristics include a maximum reverse current of 5.0 nA at 75 V and a reverse recovery time of 3.0 μs.
Verify the specific ordering suffix T116 to confirm the embossed tape reel packaging format containing 3000 units per basic ordering quantity. Ensure compatibility with standard SOT-23 footprint designs during procurement planning. Confirm RoHS compliance status matches project requirements before finalizing supply chain agreements.
Select this component when low leakage current is critical for circuit operation. The SOT-23 package provides space efficiency for surface mount applications. Verify that the 3.0 μs reverse recovery time meets the speed requirements of the target switching frequency. Ensure thermal management allows for power dissipation within the specified junction temperature limits.
This part belongs to the BAV199HM series of switching diodes designed for general purpose applications. It utilizes a silicon epitaxial planar construction to ensure stable performance. The marking code D7Z identifies the device on the package body. It is intended for use in ordinary electronic equipment rather than specialized high-reliability sectors.
BAV199HYT116 shares the same pinout and package configuration.