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The BAV199LT1 is a dual series switching diode manufactured by onsemi in an SOT-23 package. It features a maximum reverse voltage of 70 Vdc and a forward current rating of 215 mAdc. The device exhibits low leakage current, with a maximum value of 5.0 nAdc at 70 Vdc. Electrical characteristics include a maximum reverse recovery time of 3.0 μs and a diode capacitance of 2.0 pF. Thermal dissipation reaches 225 mW on FR-5 boards. Operating temperatures range from -65°C to +150°C.
Verify the specific ordering suffix to ensure correct packaging configuration. Use BAV199LT1 for 7-inch reels containing 3,000 units or BAV199LT3 for 13-inch reels with 10,000 units. Confirm RoHS compliance status through official documentation before finalizing procurement specifications.
Select this component when low leakage current and medium switching speeds are required in a small form factor. The SOT-23 package offers efficient space utilization for surface mount designs. Ensure thermal management aligns with the specified junction temperature limits and power dissipation ratings for reliable operation.
This part belongs to the BAV199 series of dual series switching diodes. It is classified as a preferred device by onsemi for future use. The component utilizes silicon epitaxial technology within a plastic SMD case. It serves as a standard solution for general signal switching tasks in electronic assemblies.
BAV199LT1G
The maximum reverse recovery time is 3.0 μs.
The device contains two diodes connected in series.
The maximum junction and storage temperature is +150°C.