BAV199S-QZ

Overview

The Nexperia BAV199S-Q is a low-leakage quadruple switching diode housed in a TSSOP6 (SOT363-3) surface-mounted package. It features a maximum repetitive peak reverse voltage of 85 V and a continuous forward current rating of 215 mA at 25 °C. The device exhibits a typical reverse recovery time of 0.8 µs and a typical reverse leakage current of 3 nA at 75 V. Qualified to the AEC-Q101 standard, it supports junction temperatures up to 150 °C.

Feature Summary

• Low leakage current performance suitable for sensitive circuits
• High-speed switching capability with fast reverse recovery
• Automotive qualification compliant with AEC-Q101 standards

Applications

• Low leakage current applications in surface mounted circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package variant and reel specifications. Confirm that the component meets the required automotive reliability standards for the intended application environment before finalizing procurement.

Selection Notes

Select this component when a compact quadruple diode configuration is required alongside strict low-leakage constraints. Ensure the design accommodates the thermal resistance characteristics and the 85 V reverse voltage limit within the operating temperature range.

Part Context

This part belongs to the Nexperia BAV199 series of high-speed switching diodes. It provides a multi-diode solution in a small footprint, replacing discrete components to save board space while maintaining high-speed switching performance and low leakage characteristics.

Replacement Considerations

BAV199S,115