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The BAV20W-E3-08 is a silicon epitaxial planar switching diode in an SOD-123 surface-mount package. It features a continuous reverse voltage of 150 V and a repetitive peak reverse voltage of 200 V. The device supports a DC forward current of 250 mA and an average rectified current of 200 mA. Electrical characteristics include a maximum forward voltage of 1.25 V at 200 mA, a leakage current of 100 nA at 150 V, and a reverse recovery time of 50 ns. Thermal resistance from junction to ambient air is 375 °C/W, with an operating temperature range of -55 °C to +150 °C.
Verify the specific ordering code suffix against the manufacturer's documentation to confirm packaging options and compliance status. Ensure that the selected variant matches the required thermal and electrical ratings for the intended application environment. Cross-reference the component marking codes to validate authenticity and traceability during the sourcing process.
Select this component when a 150 V reverse voltage rating and low capacitance are required for high-speed switching tasks. The SOD-123 package provides a compact footprint suitable for dense PCB layouts. Consider the thermal resistance limits and ensure adequate heat dissipation if operating near maximum current thresholds.
This part belongs to the BAV19W/BAV20W/BAV21W series of small-signal switching diodes manufactured by Vishay Semiconductors. The series offers differentiated reverse voltage capabilities across its models while maintaining consistent physical dimensions and electrical performance profiles for interchangeable design integration.
BAV20W-HE3-08
The maximum repetitive peak reverse voltage (VRRM) is 200 V.
No, the base P/N-E3 is designated as RoHS-compliant commercial grade. Automotive qualification requires the HE3 suffix.