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The BAV20W-G RHG is a small signal switching diode manufactured by Taiwan Semiconductor Corporation. It features a peak reverse voltage of 150 V and an average rectified forward current of 200 mA. The device exhibits a maximum reverse recovery time of 50 ns and a forward voltage drop of 1.25 V at 200 mA. Reverse leakage current is specified as 100 nA at 150 V. The component operates within a junction temperature range of -65°C to +150°C and is housed in an SOD-123 surface-mount package.
Verify the specific part number suffix against the manufacturer's official documentation to ensure correct packaging and electrical specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration into the production line. Cross-reference the datasheet revision date to validate parameter accuracy.
Select this component for applications requiring fast switching speeds and high-voltage isolation in a compact form factor. The SOD-123 package facilitates efficient PCB layout compared to through-hole alternatives. Ensure the circuit design accounts for the 150 V reverse voltage limit and 200 mA current rating under all operating conditions.
This device belongs to the BAV20W-G series of surface-mount switching diodes produced by Taiwan Semiconductor Corporation. The series utilizes planar technology to achieve hermetic sealing and consistent performance characteristics. It serves as a modern replacement for legacy leaded glass packages while maintaining similar electrical profiles for general-purpose switching tasks.
BAV21W-G RHG: Offers higher voltage rating (200 V) with identical current and speed specifications.