SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAV20W-HE3-08 is a silicon epitaxial planar switching diode from Vishay Semiconductors, designed for general-purpose applications. It features a maximum continuous reverse voltage of 150 V and a repetitive peak reverse voltage of 200 V. The device supports a DC forward current of 250 mA and an average rectified current of 200 mA. Electrical characteristics include a maximum forward voltage of 1.25 V at 200 mA, a leakage current of 100 nA at 150 V, and a reverse recovery time of 50 ns. It operates within a junction temperature range up to 150 °C and utilizes the SOD-123 surface-mount package.
Verify that the specific HE3 ordering suffix corresponds to the AEC-Q101 qualified automotive grade variant rather than the commercial E3 version. Confirm the -08 packaging code matches the required 3K reel quantity for production integration. Ensure component authenticity through authorized distribution channels to maintain reliability standards.
Select this component when a high-voltage switching diode with fast recovery characteristics is required in a compact SOD-123 footprint. The 150 V reverse voltage rating provides adequate margin for standard low-voltage logic and power rails. Consider thermal resistance limits during high-frequency operation to ensure junction temperatures remain within specified operational boundaries.
This part belongs to the BAV19W/BAV20W/BAV21W series of small-signal switching diodes manufactured by Vishay Semiconductors. The series offers differentiated reverse voltage ratings across models while maintaining consistent package dimensions and switching speeds. The BAV20W specifically targets applications requiring higher breakdown voltage tolerance compared to the BAV19W variant.
Cross-reference with BAV21W-HE3-08 for higher voltage requirements or BAV19W-HE3-08 for lower voltage applications. Verify pinout compatibility and thermal characteristics before substituting with generic equivalents.