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The BAV20W-HE3-18 is a silicon epitaxial planar switching diode in the SOD-123 surface-mount package. It features a continuous reverse voltage of 150 V and a repetitive peak reverse voltage of 200 V. The device supports a DC forward current of 250 mA and a surge forward current of 1 A. Electrical characteristics include a maximum forward voltage of 1.25 V at 200 mA, a leakage current of 100 nA at 150 V, and a reverse recovery time of 50 ns. It operates within a temperature range of -55 °C to +150 °C.
Verify that the specific ordering suffix matches the required packaging configuration for production integration. Confirm that the HE3 designation aligns with automotive qualification requirements if applicable. Ensure compliance with RoHS directives and material categorization standards before finalizing procurement specifications.
Select this component when a high-voltage small-signal diode is required in a compact surface-mount footprint. The AEC-Q101 qualification makes it suitable for automotive environments where standard commercial grade parts may be insufficient. Consider the thermal resistance and power dissipation limits relative to the ambient operating conditions.
This part belongs to the Vishay BAV19W/BAV20W/BAV21W series of small signal switching diodes. The series utilizes silicon epitaxial planar technology to provide consistent performance across different reverse voltage ratings. The BAV20W variant specifically targets applications requiring a 150 V blocking capability.
Cross-reference with other Vishay BAV20W variants or equivalent high-voltage SOD-123 switching diodes from other manufacturers. Verify pinout compatibility and ensure that replacement parts meet the same AEC-Q101 and RoHS requirements.