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The BAV20W RHG is a standard silicon switching diode manufactured by Taiwan Semiconductor Corporation. It features a maximum DC reverse voltage of 150 V and an average forward rectified current of 200 mA. The device exhibits a maximum reverse leakage current of 100 nA at 150 V and a typical junction capacitance of 1.5 pF at 0 V and 1 MHz. Forward voltage drop is specified as 1.25 V at 200 mA, with a reverse recovery time of 50 ns. It operates within a junction temperature range of -65°C to +150°C and is housed in the SOD-323 surface-mount package.
Verify the specific part number against official manufacturer documentation to confirm exact electrical ratings and package type. Ensure compatibility with design requirements regarding reverse voltage and current handling. Confirm RoHS compliance status through the latest datasheet before integration into production systems.
Select this component for circuits requiring reliable small-signal switching with low leakage characteristics. The SOD-323 package offers compact surface-mount integration suitable for space-constrained designs. Evaluate thermal management needs based on the specified junction temperature limits during operation.
This component belongs to the BAV20 series of general-purpose switching diodes fabricated using planar technology. These devices are designed for high reliability in various electronic applications, offering consistent performance across a wide operating temperature range while maintaining low forward voltage and fast recovery times.
BAV20WS-HE3-08