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The BAV21W is a silicon epitaxial planar switching diode manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a surface-mount SOD-123 package with a peak repetitive reverse voltage of 200 V and a continuous forward current rating of 200 mA. The device supports a non-repetitive peak forward surge current of 2.5 A and has a maximum power dissipation of 250 mW. Electrical characteristics include a maximum reverse leakage current of 100 nA at rated DC blocking voltage, a total capacitance of 50 pF, and a maximum reverse recovery time of 5 ns.
Verify the specific manufacturer datasheet to confirm RoHS compliance status and lead-free material declarations. Ensure the SOD-123 package dimensions match the target PCB footprint requirements. Confirm that the 200 mA continuous current rating aligns with the thermal management capabilities of the final assembly environment.
Select this component when a high-conductance switching diode with fast recovery characteristics is required in a compact surface-mount form factor. The BAV21W offers a 200 V reverse voltage rating, distinguishing it from lower-voltage variants like the BAV19W. Consider the 250 mW power dissipation limit when designing for elevated ambient temperatures.
This part belongs to the BAV19W through BAV21W series of switching diodes. These components share identical physical packaging and basic electrical structures but differ primarily in their reverse voltage ratings. The BAV21W represents the highest voltage variant within this specific family line, providing enhanced blocking capabilities compared to its counterparts.
Cross-reference with Nexperia BAV21 or STMicroelectronics BAV21 for equivalent performance specifications. Verify pinout compatibility and package tolerance alignment before substituting in existing designs.
The maximum reverse recovery time is specified as 5 ns.
Yes, the lead-free parts in this series meet RoHS requirements.