BAV21WS

Overview

The MDD BAV21WS is a silicon epitaxial planar switching diode housed in an SOD-323 plastic package. It features a peak repetitive reverse voltage of 200V and an average rectified output current of 200mA. The device exhibits a maximum reverse recovery time of 50ns and a total capacitance of 5pF at 1MHz. Forward voltage is specified at 1V with a test current of 100mA, while the non-repetitive peak forward surge current reaches 2.0A. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Fast switching speed suitable for high-frequency applications
• Low reverse current characteristics
• Surface mount package designed for automatic insertion

Applications

• General purpose switching circuits
• High-speed signal processing
• Automatic insertion manufacturing processes

Procurement Notes

Verify the specific manufacturer designation when sourcing, as multiple vendors produce this component type. Confirm that the ordering suffix matches the required marking code (T3) and packaging format. Ensure the datasheet revision aligns with the intended design specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring fast switching performance within a compact surface-mount footprint. The 200V rating provides adequate headroom for standard low-voltage logic and signal lines. Consider thermal derating curves if operating near the upper temperature limits.

Part Context

This part belongs to the BAV series of small-signal switching diodes. It shares the same physical package and general functionality as the BAV19WS and BAV20WS variants, differentiated primarily by their reverse voltage ratings. These components are widely used in consumer electronics and industrial control systems.

Replacement Considerations

Cross-reference with Vishay BAV21WS-E3-18 or Diodes Incorporated BAV21WS for equivalent electrical specifications. Verify pinout compatibility and marking codes when substituting between different manufacturers.