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The Diotec Semiconductor BAV23SE is a dual high-voltage switching diode in an SOT-23 package. It features a repetitive peak reverse voltage of 250 V and a maximum average forward current of 225 mA per diode. The device exhibits a superfast recovery time of less than 50 ns, low junction capacitance under 5 pF, and a forward voltage below 1 V at 100 mA. Power dissipation is rated at 350 mW with a junction temperature range from -55°C to +150°C.
Verify the specific suffix designation when ordering, as it determines the internal configuration and compliance status. Confirm that the required grade matches the application's reliability standards. Ensure the procurement documentation references the correct datasheet version to validate electrical parameters and mechanical specifications against the final design requirements.
Select this component for designs requiring high-voltage isolation combined with rapid switching speeds. The series connection configuration distinguishes it from common cathode or single diode variants. Evaluate thermal management needs based on the specified power dissipation limits and ambient operating conditions to ensure reliable performance within the stated temperature range.
This part belongs to the BAV23 family of small signal diodes manufactured by Diotec Semiconductor. It shares the same physical SOT-23 footprint and general electrical ratings as other members like the BAV23I and BAV23CA but utilizes a unique series connection topology. This family is designed for commercial and industrial grade applications requiring robust high-voltage switching capabilities.
BAV23S
The BAV23SE contains two diodes connected in series.
The maximum repetitive peak reverse voltage (VRRM) is 250 V.
The junction capacitance is typically less than 5 pF at 0 V reverse bias.