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The BAV70E6433HTMA1 is a silicon small-signal switching diode manufactured by Infineon Technologies. It features a dual configuration housed in an SOT-23-3 surface-mount package. Key electrical parameters include a peak reverse voltage of 85 V, a maximum forward current of 200 mA, and a power dissipation rating of 250 mW. The device exhibits a fast recovery time of 4 ns, with a typical forward voltage of 1.25 V and a reverse current of 50 uA. It operates within a temperature range of -65 C to +150 C and holds AEC-Q100 qualification for automotive reliability.
Verify component authenticity through authorized channels due to end-of-life status. Confirm specific ordering suffixes match exact packaging requirements such as reel or cut tape specifications. Ensure compatibility with existing PCB footprints and thermal management strategies during integration planning.
Select this component for designs requiring robust automotive-grade switching capabilities in minimal space. Consider the 85 V reverse voltage limit and 200 mA forward current capacity against circuit demands. Evaluate the SOT-23-3 package constraints for thermal dissipation and soldering processes relative to system operating temperatures.
This part belongs to the BAV70 series of small-signal switching diodes from Infineon Technologies. It represents a specialized variant optimized for automotive environments, distinguished by its AEC-Q100 qualification. The component serves as a reliable solution for high-frequency signal handling in constrained board spaces.
BAV70E6433HTSA1