SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BAV70LT3G is a dual common cathode switching diode manufactured by onsemi in an SOT-23 surface-mount package. It features a maximum reverse voltage of 100 V and a forward current rating of 200 mA per diode. The device exhibits a peak reverse recovery time of 6 ns and a maximum forward voltage of 1.25 V at 150 mA. Total power dissipation reaches 300 mW on an alumina substrate, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix 'LT3G' confirms the 10,000-unit tape and reel packaging format. Ensure the component meets RoHS compliance and lead-free requirements as specified in the datasheet. Confirm that the AEC-Q101 qualification status aligns with project-specific automotive reliability standards before finalizing procurement.
Select this component when a dual common cathode topology is required in a minimal footprint. The 100 V reverse voltage rating provides adequate headroom for standard low-voltage logic systems. The 6 ns recovery time supports high-speed data lines where fast transition times are critical for signal integrity.
This part belongs to the BAV70L series of silicon junction switching diodes. It shares the same electrical characteristics and pinout as the BAV70LT1G, differing primarily in shipping quantity. The device utilizes the SOT-23 (TO-236) case style 9 configuration.
BAV70LT1G
Pin 1 is Anode, Pin 2 is Anode, and Pin 3 is Cathode.
Yes, it is AEC-Q101 qualified and PPAP capable for automotive applications.
The total device dissipation is 225 mW on an FR-5 board at 25°C ambient temperature.