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The BAV70UE6327HTSA1 is a silicon switching diode manufactured by Infineon Technologies, designed for high-speed signal processing applications. It features a dual common cathode configuration housed in an SC-74-6 (SOT-363) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 85 V and handles a continuous forward current of 200 mA. Key electrical characteristics include a low reverse recovery time of 4 ns and a typical junction capacitance of 2 pF at 0 V bias. It operates within a temperature range of -65°C to +150°C and complies with RoHS standards.
Verify the specific suffix HTSA1 against official Infineon documentation to confirm packaging and compliance details. Ensure the SC-74-6 footprint matches your PCB design constraints. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Select this component when a dual diode solution is required in a minimal footprint. The low capacitance makes it preferable over standard rectifiers for high-frequency applications. Verify that the 85 V reverse voltage rating exceeds the peak inverse voltage in your specific circuit design to ensure reliable operation under all conditions.
This part belongs to Infineon's BAV series of small-signal switching diodes. The UE6327HTSA1 designation indicates specific tape-and-reel packaging and environmental compliance. It serves as a compact alternative to discrete single diodes in space-constrained designs requiring dual-channel functionality.
BAV99UE6327HTSA1 offers similar dual configuration but with different electrical ratings. BAV70E6327HTSA1 provides the same electrical performance in a smaller SOT-23-3 package. Verify pinout compatibility and thermal characteristics when substituting these alternatives.