BAV70W

Overview

The BAV70W is a silicon switching diode array manufactured by SMC Diode Solutions, housed in an SOT-323 surface-mount package. It features a common cathode configuration with two independent elements. Key electrical specifications include a maximum repetitive peak reverse voltage of 85 V and a continuous reverse voltage of 80 V. The device supports a maximum average forward rectified current of 150 mA and a peak forward surge current of 4.5 A. Electrical characteristics specify a maximum forward voltage of 1.25 V at 150 mA and a maximum reverse leakage current of 50 μA. The component exhibits a fast switching speed with a maximum reverse recovery time of 4 ns and operates within a junction temperature range up to 150 °C.

Feature Summary

• High-speed switching capability with a maximum reverse recovery time of 4 ns for efficient signal processing.
• Dual-element common cathode architecture integrated into a compact SOT-323 surface-mount footprint.
• Robust thermal performance supporting operation at junction temperatures up to 150 °C.

Applications

• High-speed switching circuits in thin-film and thick-film technologies.
• Signal demodulation and detection in communication systems.
• Logic level shifting and clamping applications in digital circuits.

Procurement Notes

Verify the specific manufacturer designation on the component marking, as BAV70W is a JEDEC-style part number produced by multiple vendors including Infineon, NXP, and Diodes Inc. Confirm that the received unit matches the required SOT-323 package dimensions and pinout configuration. Ensure compliance with RoHS and halogen-free requirements if specified for the assembly process. Cross-reference the datasheet revision date to confirm parameter consistency with design specifications.

Selection Notes

Select this component when a dual diode array with common cathode topology is required in a space-constrained SOT-323 package. The 4 ns reverse recovery time makes it suitable for high-frequency applications where standard rectifiers are too slow. Ensure the circuit's peak reverse voltage does not exceed 85 V and the average forward current remains within the 150 mA limit. Consider the 1.25 V forward voltage drop for power dissipation calculations in low-voltage logic interfaces.

Part Context

The BAV70W belongs to the family of small-signal silicon switching diodes designed for general-purpose high-speed applications. It serves as a compact alternative to through-hole discrete diodes, offering reduced parasitic inductance and capacitance due to its surface-mount construction. The common cathode arrangement allows for efficient implementation of bridge rectifiers or logic gates using minimal board space. This component type is widely utilized in consumer electronics and industrial control systems requiring reliable signal handling.

Replacement Considerations

Verified equivalent part numbers include BAV70LT1G (onsemi), BAV70WT1G (onsemi), and BAV70-7-F (Diodes Inc). These alternatives share the same SOT-23/SOT-323 pinout and similar electrical characteristics, ensuring mechanical and functional compatibility during redesign or supply chain substitution.