BAV70WH6327XTSA1

Overview

The BAV70WH6327XTSA1 is a dual Schottky barrier diode from Infineon Technologies, housed in the SOT-343 surface-mount package. It features a common cathode configuration with two independent diodes within a single compact footprint. The device is rated for a maximum repetitive peak reverse voltage of 40 V and a continuous forward current of 70 mA per diode. Key electrical characteristics include a low forward voltage drop of approximately 500 mV at 10 mA and a maximum reverse leakage current of 1 μA at 40 V. The component operates reliably across an extended temperature range from -55 °C to +150 °C junction temperature.

Feature Summary

• Dual Schottky barrier diodes integrated into a single compact SOT-343 surface-mount package
• Common cathode configuration providing independent switching paths
• Low forward voltage drop characteristic for efficient signal rectification
• High thermal stability supporting operation up to 150 °C junction temperature

Applications

• Signal mixing and detection circuits
• Clamping and protection of sensitive input lines
• Logic level shifting between different voltage domains
• OR-ing configurations for power supply redundancy

Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging format and tape-and-reel specifications. Ensure compatibility with standard SOT-343 footprints during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require dual Schottky functionality. The SOT-343 package offers a smaller footprint compared to discrete dual-diode solutions. Consider the 40 V reverse voltage rating and 70 mA current limit to ensure adequate headroom for the target application signals. Evaluate the low capacitance typical of Schottky structures for high-speed signal integrity requirements.

Part Context

This part belongs to the BAS/BASV/BAV series of small-signal Schottky diodes manufactured by Infineon Technologies. These components are widely utilized in consumer electronics and telecommunications equipment due to their fast switching speeds and low profile. The BAV70 variant specifically provides a balanced solution for general-purpose switching applications requiring minimal voltage loss.

Replacement Considerations

Cross-reference with other manufacturers' dual Schottky diodes in SOT-343 packages, such as those from Nexperia or ON Semiconductor. Verify pinout compatibility and electrical parameter equivalence, particularly forward voltage and reverse leakage, before substituting.