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The BAV99-HE3-18 is a dual general-purpose switching diode manufactured by Vishay General Semiconductor - Diodes Division. It features two silicon rectifier elements in a series-connected, center-tapped configuration within an R-PDSO-G3 package. The device supports a maximum repetitive reverse voltage of 70 V and an average forward rectified current of 150 mA per diode. It exhibits a maximum non-repetitive peak forward surge current of 4.5 A and a maximum forward voltage of 0.715 V. The component operates reliably within a junction temperature range of -55 °C to 150 °C.
Verify the specific HE3-18 suffix against official Vishay documentation to confirm RoHS compliance and lead-free status. Ensure the ordering part number matches the required tape-and-reel packaging format. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement specifications.
Select this component for designs requiring fast recovery times and low forward voltage drop in small form factors. Compare the 70 V reverse voltage rating against circuit peak inverse voltage requirements. Evaluate the 150 mA continuous current limit against load demands to ensure adequate thermal headroom and reliability under operating conditions.
This component belongs to the BAV99 series of high-speed switching diodes designed for surface-mount technology. It serves as a standard solution for discrete semiconductor applications requiring reliable rectification and switching performance in consumer electronics and industrial control systems.
BAV99-E3-08 offers similar pinout and package compatibility. Verify that the replacement meets the same 70 V reverse voltage and 150 mA current ratings. Confirm that the reverse recovery time and leakage current specifications align with the original design constraints.