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The BAW156HMT116 is a dual common anode switching diode manufactured by ROHM Semiconductor. It features a peak reverse voltage of 100 V and a maximum forward current of 215 mA. The device exhibits a low reverse leakage current of 5 nA and a typical recovery time of 3 µs. With a maximum power dissipation of 250 mW and a maximum operating temperature of +150 °C, it is housed in an SOT-23-3 surface-mount package.
Verify the specific suffix against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Select this component when a dual diode solution with common anode topology is required in a minimal footprint. The low leakage characteristic makes it appropriate for sensitive analog front ends. Compare the 3 µs recovery time against faster alternatives if high-frequency switching performance is critical for the target application design.
This part belongs to the BAW156 series of small-signal switching diodes from ROHM. It shares the same internal die and electrical characteristics as the BAW156HY variant, differing primarily in the manufacturing lot or specific packaging designation. It serves as a standard discrete semiconductor solution for general-purpose rectification and switching tasks.
The BAW156HYT116 is documented as a similar level part with the same pinout and package. Verify functional equivalence through direct datasheet comparison before substitution.