BAW156HMT116

BAW156HMT116

$0.19
  • Description:DIODE ARRAY GP 80V 215MA SSD3
  • Series:-

SKU:f2e87be98531 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE ARRAY GP 80V 215MA SSD3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):80 V
  • Current - Average Rectified (Io) (per Diode):215mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):3 µs
  • Current - Reverse Leakage @ Vr:5 nA @ 75 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SSD3
  • Grade:-
  • Qualification:-

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BAW156HMT116

Overview

The BAW156HMT116 is a dual common anode switching diode manufactured by ROHM Semiconductor. It features a peak reverse voltage of 100 V and a maximum forward current of 215 mA. The device exhibits a low reverse leakage current of 5 nA and a typical recovery time of 3 µs. With a maximum power dissipation of 250 mW and a maximum operating temperature of +150 °C, it is housed in an SOT-23-3 surface-mount package.

Feature Summary

  • Dual common anode configuration for compact circuit integration
  • Low reverse leakage current suitable for high-impedance applications
  • High thermal stability with a maximum junction temperature of 150 °C

Applications

  • General purpose signal switching circuits
  • Clamping and protection stages in electronic systems
  • Logic level interface isolation

Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the component meets required automotive or industrial qualification standards if applicable. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a dual diode solution with common anode topology is required in a minimal footprint. The low leakage characteristic makes it appropriate for sensitive analog front ends. Compare the 3 µs recovery time against faster alternatives if high-frequency switching performance is critical for the target application design.

Part Context

This part belongs to the BAW156 series of small-signal switching diodes from ROHM. It shares the same internal die and electrical characteristics as the BAW156HY variant, differing primarily in the manufacturing lot or specific packaging designation. It serves as a standard discrete semiconductor solution for general-purpose rectification and switching tasks.

Replacement Considerations

The BAW156HYT116 is documented as a similar level part with the same pinout and package. Verify functional equivalence through direct datasheet comparison before substitution.

BAW156HMT116BAW156HMT116
$0.19
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