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The BAW27-TR is a single silicon epitaxial planar switching diode from Vishay Semiconductors, packaged in the DO-35 (DO-204AH) through-hole format. It features a repetitive peak reverse voltage of 75 V and a maximum forward continuous current of 600 mA. The device exhibits a low forward voltage drop, reaching up to 1.25 V at 400 mA, and a fast reverse recovery time of 6 ns. Electrical characteristics include a breakdown voltage of 75 V at 5 μA and a typical capacitance of 4 pF. Thermal management allows for a junction temperature up to 175 °C with power dissipation rated at 500 mW under standard conditions.
Verify that the specific ordering code matches the required packaging option, such as tape and reel or ammopack configurations. Confirm compliance requirements against the material categorization definitions provided by the manufacturer. Ensure thermal design accounts for the specified junction-to-ambient resistance values during operation.
Select this component when a small-signal switching diode with high current handling is required. The DO-35 package facilitates easy integration into through-hole designs. Evaluate the 6 ns reverse recovery time against circuit frequency requirements to ensure adequate switching speed without excessive losses.
This part belongs to the BAW27 series of small signal switching diodes manufactured by Vishay Semiconductors. The series is designed for general-purpose applications requiring reliable performance in both computer and industrial environments. The TR suffix indicates the specific tape and reel packaging variant available for automated assembly processes.
Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains equivalent reverse voltage ratings and forward current capabilities.