BAW56E6433

$0.02

Description：DIODE ARRAY GP 80V 200MA PGSOT23
Series：-

SKU:76366b637551 Category: Diode Arrays Brand: Infineon Technologies

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Product introduction

BAW56E6433 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARRAY GP 80V 200MA PGSOT23. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAW56E6433

Description：DIODE ARRAY GP 80V 200MA PGSOT23
Series：-
Mfr：Infineon Technologies
Package：Bulk
Diode Configuration：1 Pair Common Anode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：200mA (DC)
Voltage - Forward (Vf) (Max) @ If：1.25 V @ 150 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：4 ns
Current - Reverse Leakage @ Vr：150 nA @ 70 V
Operating Temperature - Junction：150°C (Max)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

Diode Arrays datasheet and documents for BAW56E6433

BAW56E6433

Diode Arrays Overview

The BAW56E6433 is a dual NPN silicon RF transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package with four pins. The device operates within a temperature range of -65°C to +150°C and supports a maximum power dissipation of 330 mW. Key electrical parameters include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. The component features a maximum DC collector current of 100 mA and a transition frequency (fT) of 250 MHz.

Diode Arrays Feature Summary

Dual NPN configuration for compact circuit integration
High-frequency operation capability suitable for RF applications
Robust thermal performance with extended operating temperature range

Diode Arrays Applications

RF signal amplification
General-purpose switching circuits
Audio frequency amplification

Diode Arrays Procurement Notes

Verify the specific ordering suffix E6433 to ensure correct reel packaging and binning. Confirm that the component status aligns with project requirements, as availability may vary. Cross-reference the manufacturer part number BSP76E6433HUMA1 or similar identifiers if necessary for supply chain matching. Ensure compliance with RoHS directives before final procurement.

Diode Arrays Selection Notes

Select this component when a dual NPN structure is required in a minimal footprint. The 250 MHz transition frequency makes it suitable for radio frequency tasks. Consider the 30 V voltage ratings for low-voltage logic interfacing. The SOT-23-3 package facilitates automated surface-mount assembly processes.

Diode Arrays Part Context

This component belongs to Infineon's discrete bipolar junction transistor portfolio. It utilizes silicon technology optimized for high-frequency performance. The device is designed for surface-mount applications requiring reliable switching and amplification in consumer and industrial electronics.