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BAW56SH6327XTSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARR GP 80V 200MA SOT363-PO. Review the specifications below when checking this part for your BOM.
The BAW56SH6327XTSA1 is a small signal switching diode manufactured by Infineon Technologies. It features a dual configuration housed in an SOT-363-6 surface-mount package. Key electrical parameters include a peak reverse voltage of 85 V, a maximum forward current of 200 mA, and a reverse recovery time of 4 ns. The device supports a power dissipation of 250 mW with a maximum junction temperature of +150 C and operates within a temperature range of -65 C to +150 C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix H6327XTSA1 matches project requirements as packaging details may vary. Check current lifecycle status as this part indicates end-of-life conditions in some sources. Ensure RoHS compliance documentation is available for regulatory adherence.
Select this component for designs requiring dual diodes in a minimal footprint SOT-363 package. Consider the 85 V reverse voltage rating and 200 mA forward current limits when designing signal paths. Evaluate the 4 ns recovery time against switching frequency requirements. Verify thermal management capabilities given the 250 mW power dissipation limit in the specified package.
This component belongs to the BAW56 series of general-purpose high-speed switching diodes from Infineon. It utilizes silicon technology optimized for fast switching applications. The SOT-363 package provides a space-efficient solution for modern surface-mount assembly processes. The part is designed for use in digital and analog signal switching environments.
BAV99SH6327XTSA1
The reverse recovery time is 4 ns.
Yes, the component holds AEC-Q101 qualification.
It uses an SOT-363-6 surface-mount package.
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