Diode Arrays BAW56SRAZ product image

BAW56SRAZ

  • Description:DIODE ARR GP 90V 375MA DFN1412-6
  • Series:-

SKU:90de647b770a Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BAW56SRAZ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is DIODE ARR GP 90V 375MA DFN1412-6. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BAW56SRAZ

  • Description:DIODE ARR GP 90V 375MA DFN1412-6
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Configuration:2 Pair Common Anode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):90 V
  • Current - Average Rectified (Io) (per Diode):375mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 ns
  • Current - Reverse Leakage @ Vr:500 nA @ 80 V
  • Operating Temperature - Junction:150°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:6-XFDFN Exposed Pad
  • Supplier Device Package:DFN1412-6
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BAW56SRAZ

BAW56SRAZ

Diode Arrays Overview

The BAW56SRAZ is a dual common-anode switching diode array manufactured by Nexperia USA Inc. It utilizes silicon junction technology and is housed in an SOT-363 (SC-88) surface-mount package with six pins. The device features a maximum repetitive peak reverse voltage of 90 V and a continuous forward current rating of 250 mA. Key electrical characteristics include a peak reverse recovery time of 4 ns, a maximum forward voltage of 1.25 V at specified currents, and a reverse leakage current of 500 nA at 80 V. The component operates within a temperature range of -65°C to +150°C and has a maximum power dissipation of 250 mW.

Diode Arrays Feature Summary

  • Dual common-anode configuration for efficient circuit integration
  • Fast switching performance with low reverse recovery time
  • Compact surface-mount packaging for space-constrained designs

Diode Arrays Applications

  • General purpose signal rectification
  • Clamping and protection circuits
  • Logic level shifting applications

Diode Arrays Procurement Notes

Verify the specific suffix 'RAZ' against official Nexperia documentation to confirm tape-and-reel specifications and moisture sensitivity levels. Ensure compatibility with standard SC-88 footprint requirements during procurement planning. Cross-reference part numbers with authorized distributors to avoid counterfeit components.

Diode Arrays Selection Notes

Select this component when a dual diode solution is required in a minimal footprint. The SOT-363 package offers pin-out flexibility compared to single diodes. Consider the 90 V reverse voltage rating and 250 mA current capacity for suitability in low-power signal processing tasks.

Diode Arrays Part Context

This part belongs to the BAW56 series of small-signal switching diodes from Nexperia. The series is designed for high-speed switching applications requiring low capacitance and fast recovery times. The SOT-363 variant provides two independent diodes in a single compact package, optimizing board space.

Diode Arrays Replacement Considerations

BAW56,115

Diode Arrays FAQ

What is the package type for the BAW56SRAZ?

The BAW56SRAZ is available in the SOT-363 (also known as SC-88) surface-mount package.

What is the maximum operating junction temperature?

The maximum operating junction temperature for this device is 150°C.

Is this component AEC-Q101 qualified?

Yes, the BAW56S series is AEC-Q101 qualified for automotive applications.

BAW56SRAZBAW56SRAZ

Click on the inquiry