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BAW56WE6327HTSA1 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE ARRAY GP 80V 200MA SOT323. Review the specifications below when checking this part for your BOM.
BAW56WE6327HTSA1 is a small signal switching diode manufactured by Infineon Technologies. It features a dual configuration housed in an SOT-323-3 surface-mount package. The component supports a peak reverse voltage of 85 V and a maximum forward current of 200 mA. Key electrical parameters include a recovery time of 4 ns, a forward voltage of 1.25 V, and a reverse current of 150 nA. It operates within a temperature range of -65 °C to +150 °C with a power dissipation rating of 250 mW.
Verify the specific suffix HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's datasheet. Check for end-of-life notices as similar BAW56 variants have been discontinued. Ensure the SOT-323-3 footprint matches the target PCB design before procurement.
Select this component when a dual-diode solution is required in a minimal SOT-323-3 footprint. The 4 ns recovery time makes it suitable for high-frequency switching applications. Verify that the 85 V reverse voltage rating meets the circuit's peak inverse voltage requirements. Consider the 200 mA forward current limit for load handling capabilities.
This part belongs to the BAW56 series of silicon switching diodes from Infineon. It is designed for general-purpose applications requiring fast switching speeds. The SOT-323-3 package allows for automated surface-mount assembly. It serves as a compact alternative to discrete single diodes in space-constrained designs.
BAW56SH6327XTSA1 offers a similar dual configuration but uses an SOT-363 package. BAW56WE6327 is a related variant with identical electrical characteristics but may differ in packaging or suffix codes. Verify pinout compatibility and package dimensions before substitution.
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