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The BAW75-TAP is a silicon epitaxial planar switching diode manufactured by Vishay Semiconductors. It operates in the DO-35 (DO-204AH) axial leaded package with an approximate weight of 125 mg. The device features a repetitive peak reverse voltage of 35 V and a forward continuous current rating of 300 mA. Electrical characteristics include a maximum reverse recovery time of 4 ns at specified test conditions, a typical diode capacitance of 4 pF at 1 MHz, and a forward voltage drop of 1 V at 30 mA. The component supports a junction temperature up to 175 °C.
Verify the specific ordering code suffix against official documentation to confirm packaging details. The TAP designation indicates availability in an ammopack configuration. Ensure that the required quantity aligns with standard factory packaging multiples. Confirm RoHS compliance status through the manufacturer's material categorization definitions before finalizing procurement orders.
Select this component when designing circuits requiring rapid signal transition speeds and low parasitic capacitance. The DO-35 package is suitable for through-hole mounting where space constraints are less critical than in surface-mount designs. Evaluate thermal resistance requirements based on ambient operating temperatures and expected power dissipation levels during continuous operation.
This part belongs to the BAW75 series of small-signal switching diodes produced by Vishay Semiconductors. The series is engineered for applications demanding precise switching performance and reliability. The BAW75 variant specifically targets general-purpose high-speed switching needs within the broader discrete semiconductor portfolio.
Consult official substitution lists for verified alternatives. Generic replacements may not match the specific 4 ns reverse recovery time or 4 pF capacitance values. Verify pinout compatibility and thermal characteristics before integrating substitute components into existing designs.