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The BAW78C is a silicon switching diode manufactured by Infineon Technologies. It features a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current rating of 1 A. The component utilizes a surface-mount PG-SOT89-4-2 package, designed for efficient thermal management and compact circuit board integration. It operates within standard industrial temperature ranges suitable for general-purpose rectification and switching applications in electronic systems.
Verify the specific package variant matches the required footprint, as SOT-89 variations exist. Confirm RoHS compliance status with the supplier for environmental regulations. Check the latest datasheet revision for any updates on absolute maximum ratings or thermal characteristics before finalizing the design.
Select this component when a 200 V reverse voltage rating and 1 A current capacity are required in a small surface-mount form factor. Ensure the application does not exceed the specified thermal limits. Compare against other BAW series variants if different voltage or current specifications better suit the system requirements.
The BAW78C belongs to Infineon's BAW series of silicon switching diodes. This family provides reliable performance for general-purpose electronics. The component is distinct from power FETs like the BSP78 or memory devices like the CY7C1418KV18-250BZXC found in broader product listings.
Consult official replacement lists for direct equivalents. Verify pinout compatibility and electrical parameters such as forward voltage drop and recovery time when substituting with similar diodes from other manufacturers.