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Product Detailed Parameters
- Description：DIODE AVALANCHE 90V 400MA DO35
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Technology：Avalanche
- Voltage - DC Reverse (Vr) (Max)：90 V
- Current - Average Rectified (Io)：400mA
- Voltage - Forward (Vf) (Max) @ If：1.25 V @ 400 mA
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：50 ns
- Current - Reverse Leakage @ Vr：100 nA @ 90 V
- Capacitance @ Vr, F：35pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：DO-204AH, DO-35, Axial
- Supplier Device Package：DO-35
- Operating Temperature - Junction：-65°C ~ 200°C
- Grade：-
- Qualification：-
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Overview
The BAX12 TR is a controlled avalanche diode manufactured by Central Semiconductor Corp. It utilizes an epitaxial planar process and is hermetically sealed in a DO-35 glass package. The device features a peak repetitive reverse voltage of 90 V and a continuous reverse voltage of 90 V. Electrical characteristics include a breakdown voltage ranging from 120 V to 170 V at 1.0 mA reverse current, with a maximum leakage current of 100 nA at 90 V. The component supports a continuous forward current of 400 mA and offers a junction temperature range from -65°C to +200°C.
Feature Summary
- Hermetically sealed construction using an epitaxial planar manufacturing process
- Controlled avalanche capability for specific switching applications
- High thermal stability with extended operating junction temperature limits
Applications
- Switching circuits requiring controlled avalanche behavior
- Electronic designs utilizing the DO-35 axial leaded form factor
- Prototypes or legacy systems specifying this exact component
Procurement Notes
This component has been officially transitioned to End of Life status by Central Semiconductor Corp. Current availability is restricted to existing inventory only. Last purchase orders must be placed within six months of the official notice date, with final shipments occurring within twelve months. No new production runs are scheduled, and direct replacement part numbers are not provided by the manufacturer.
Selection Notes
Designers should evaluate alternative components immediately due to the discontinued status of the BAX12. Since no official replacement part numbers are listed by the manufacturer, engineers must perform manual cross-referencing to find equivalent controlled avalanche diodes. Verify that any substitute matches the required 90 V rating, DO-35 package dimensions, and electrical specifications before integration.
Part Context
The BAX12 belongs to the category of controlled avalanche diodes produced by Central Semiconductor Corp. These devices are designed for robust performance in high-stress environments. The product line typically includes various voltage ratings and packaging options, but this specific model represents a specialized component for niche switching requirements.
Replacement Considerations
No public confirmed substitute part numbers are available from Central Semiconductor Corp. for the BAX12 TR. Engineers must identify third-party equivalents independently based on technical parameters.
FAQ
What is the breakdown voltage range for the BAX12?
The breakdown voltage (BVR) ranges from 120 V to 170 V when tested at a reverse current of 1.0 mA.
Is the BAX12 currently in production?
No, the BAX12 has been classified as End of Life (EOL) by Central Semiconductor Corp., and no new units are being manufactured.
