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The BB837E6327HTSA1 is a silicon varactor diode manufactured by Infineon Technologies, designed for tuning applications in radio frequency circuits. It operates within a reverse voltage range up to 30 V and supports a forward current of 20 mA. The device exhibits a capacitance of 6 pF and achieves a minimum tuning ratio of 10.2 under specified test conditions (1 V / 25 V). Packaged in the SOD-323-2 surface-mount format, it functions reliably across an extended temperature spectrum from -55 °C to +150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required tape-and-reel packaging configuration. Ensure compliance with RoHS directives as indicated in the manufacturer's documentation before integration into production workflows.
Select this component when a compact silicon varactor with high thermal stability is required. The SOD-323-2 footprint suits space-constrained designs. Evaluate the 6 pF baseline capacitance and 10.2 tuning ratio against circuit requirements to ensure adequate frequency coverage without excessive bias voltage swings.
This part belongs to Infineon's BB837 series of tuning diodes. The E6327HTSA1 suffix denotes the specific mass production version packaged in standard reels. It serves as a discrete semiconductor solution for variable capacitance needs in communication hardware.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other silicon varactors offering similar C-V characteristics and SOD-323-2 compatibility if discontinuation occurs.