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The Toshiba 1SV305,H3F is a silicon epitaxial planar variable capacitance diode designed for VHF band radio voltage-controlled oscillators. It operates with a maximum reverse voltage of 10V and a junction temperature rating of 125°C. Electrical characteristics at 25°C include a capacitance of 17.3–19.3 pF at 1V reverse bias and 5.3–6.6 pF at 4V, yielding a typical capacitance ratio (C1V/C4V) of 3.0. The device exhibits a low series resistance of 0.27 Ω typically at 470 MHz. It is housed in a compact 1-1G1A package measuring 1.2 x 0.8 x 0.6 mm.
Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging and marking configurations. Ensure compliance with environmental directives such as RoHS by checking the latest product information sheets provided by the manufacturer before finalizing procurement specifications.
Select this component when designing VHF band radio circuits requiring a high capacitance ratio and low series resistance. Confirm that the 10V maximum reverse voltage and 125°C junction temperature limits align with the intended operating environment and electrical requirements of the target application circuit.
This component belongs to the Toshiba 1SV305 family of silicon epitaxial planar variable capacitance diodes. These devices are engineered specifically for applications demanding stable performance within VHF frequency ranges, utilizing advanced semiconductor manufacturing processes to achieve consistent electrical parameters across production batches.
Publicly confirmed substitute part numbers are not available in the verified source material. Consult official Toshiba Semiconductor catalogs or authorized distributors for potential cross-reference options that meet identical electrical and mechanical specifications.