1SV305,H3F

1SV305,H3F

  • Description:DIODE VARACTOR 10V ESC
  • Series:-

SKU:a2ba24d7b9e6 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE VARACTOR 10V ESC
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • Capacitance @ Vr, F:6.6pF @ 4V, 1MHz
  • Capacitance Ratio:3
  • Capacitance Ratio Condition:C1/C4
  • Voltage - Peak Reverse (Max):10 V
  • Diode Type:Single
  • Q @ Vr, F:-
  • Operating Temperature:125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-79, SOD-523
  • Supplier Device Package:ESC

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1SV305,H3F

Overview

The Toshiba 1SV305,H3F is a silicon epitaxial planar variable capacitance diode designed for VHF band radio voltage-controlled oscillators. It operates with a maximum reverse voltage of 10V and a junction temperature rating of 125°C. Electrical characteristics at 25°C include a capacitance of 17.3–19.3 pF at 1V reverse bias and 5.3–6.6 pF at 4V, yielding a typical capacitance ratio (C1V/C4V) of 3.0. The device exhibits a low series resistance of 0.27 Ω typically at 470 MHz. It is housed in a compact 1-1G1A package measuring 1.2 x 0.8 x 0.6 mm.

Feature Summary

  • High capacitance ratio for effective tuning range
  • Low series resistance to minimize signal loss
  • Compact surface-mount package design

Applications

  • Voltage-controlled oscillators for VHF band radios

Procurement Notes

Verify the specific ordering suffix against official Toshiba Semiconductor documentation to confirm exact packaging and marking configurations. Ensure compliance with environmental directives such as RoHS by checking the latest product information sheets provided by the manufacturer before finalizing procurement specifications.

Selection Notes

Select this component when designing VHF band radio circuits requiring a high capacitance ratio and low series resistance. Confirm that the 10V maximum reverse voltage and 125°C junction temperature limits align with the intended operating environment and electrical requirements of the target application circuit.

Part Context

This component belongs to the Toshiba 1SV305 family of silicon epitaxial planar variable capacitance diodes. These devices are engineered specifically for applications demanding stable performance within VHF frequency ranges, utilizing advanced semiconductor manufacturing processes to achieve consistent electrical parameters across production batches.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified source material. Consult official Toshiba Semiconductor catalogs or authorized distributors for potential cross-reference options that meet identical electrical and mechanical specifications.

1SV305,H3F1SV305,H3F

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