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The 1SV280,H3F is a silicon epitaxial planar variable capacitance diode manufactured by Toshiba Semiconductor and Storage. Designed for UHF band radio VCO applications, it features a high capacitance ratio of 2.4 (typ.) at C2V/C10V and low series resistance of 0.44 Ω (typ.). The device supports a maximum reverse voltage of 15 V and operates up to a junction temperature of 125 °C. It is housed in an ESC package with dimensions compatible with SMD mounting.
Verify the specific ordering suffix against official Toshiba documentation before procurement. Confirm that the component meets RoHS compliance requirements for your target market. Ensure the design accounts for absolute maximum ratings to maintain reliability under heavy loads or significant temperature changes.
Select this component when a high capacitance ratio and low series resistance are required for UHF band tuning applications. Verify that the 15 V reverse voltage rating aligns with the circuit's peak operating conditions. Consider the ESC package dimensions during PCB layout planning.
The 1SV280 is part of Toshiba's silicon epitaxial planar variable capacitance diode lineup. It was commercially produced starting in July 1994. The H3F suffix typically indicates environmental compliance, but verify specific marking and packaging details in the official datasheet.
No public confirmed substitute part numbers are available in the provided source material. Consult Toshiba sales representatives for potential alternatives if this component is unavailable.
The typical capacitance ratio (C2V / C10V) is 2.4.
The maximum reverse voltage (VR) is 15 V.
The typical series resistance (rs) is 0.44 Ω at VR = 1 V and f = 470 MHz.