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The BBY 65-02V E6327 is a silicon tuning diode from the BBY65 series, designed for low tuning voltage operation in mobile communications equipment. It features high Q hyperabrupt characteristics and very low capacitance spread. The device operates within a temperature range of -55°C to +150°C and supports a maximum reverse voltage of 15 V. Key electrical parameters include a typical capacitance of 28.2 pF at 0.3 V reverse bias and a minimum capacitance ratio of 10 between 0.3 V and 4.7 V. It utilizes the SC79 package with a single diode configuration.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure storage conditions adhere to specified limits to maintain performance integrity during handling and assembly processes.
Select this component for designs requiring precise frequency control with minimal capacitance variation. Evaluate the SC79 package constraints against board space requirements. Consider the operating temperature range and reverse voltage ratings to ensure compatibility with the target circuit environment and signal levels.
This part belongs to the BBY65 series of silicon tuning diodes manufactured by Infineon Technologies. The series is characterized by hyperabrupt junction profiles suitable for wide-range frequency modulation. The specific model BBY 65-02V denotes the single diode variant within the SC79 package format.
Consult official Infineon documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.