BBY5305WE6327

BBY5305WE6327

$0.11
  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-

SKU:130357655d97 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:VARIABLE CAPACITANCE DIODE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Capacitance @ Vr, F:3.1pF @ 3V, 1MHz
  • Capacitance Ratio:2.6
  • Capacitance Ratio Condition:C1/C3
  • Voltage - Peak Reverse (Max):6 V
  • Diode Type:1 Pair Common Cathode
  • Q @ Vr, F:-
  • Operating Temperature:-55°C ~ 125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

Download product information

BBY5305WE6327

Overview

The BBY5305WE6327 is a silicon varactor diode manufactured by Infineon Technologies, belonging to the BBY53 series. It features a common cathode configuration with two internal elements housed in an SOT-323 surface-mount package. The device is designed for ultra-high frequency applications, offering a nominal capacitance of 5.3 pF and a minimum breakdown voltage of 6 V. Key electrical characteristics include a minimum diode capacitance ratio of 1.8 and a tolerance of approximately 9.43%. The component complies with RoHS standards and is supplied in cut tape or reel formats.

Feature Summary

  • Dual-element common cathode structure for compact circuit integration
  • Optimized for ultra-high frequency tuning and RF signal processing
  • Silicon-based construction ensuring stable variable capacitance performance

Applications

  • RF tuning circuits in communication equipment
  • Voltage-controlled oscillators (VCOs)
  • Frequency synthesizers and phase-locked loops

Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm availability status as distribution channels may list end-of-life or limited stock items. Ensure the ordering part number matches the required package variant and compliance certifications before finalizing procurement orders.

Selection Notes

Select this component when a low nominal capacitance around 5.3 pF is required for UHF applications. The common cathode dual-element design allows for differential tuning or balanced circuit topologies within a minimal footprint. Verify that the 6 V breakdown voltage aligns with the maximum reverse bias requirements of the target RF circuit design.

Part Context

This part belongs to the BBY53 family of silicon tuning diodes from Infineon. These components are engineered for high-Q performance in radio frequency environments. The BBY53 series typically offers various capacitance values and package options to suit diverse mobile and wireless device architectures requiring precise frequency control.

Replacement Considerations

Cross-reference with other BBY53 series variants such as BBY5302VH6327XTSA1 for similar form-factor replacements. Verify pinout compatibility and electrical parameter overlaps before substituting. Consult official Infineon selection guides for direct equivalents with matching capacitance ratios and package types.

BBY5305WE6327BBY5305WE6327
$0.11
Buy Now