BBY6502VH6327XTSA1

Overview

The BBY6502VH6327XTSA1 is a silicon hyperabrupt tuning diode manufactured by Infineon Technologies. It operates within a reverse voltage range of up to 15 V and supports forward currents up to 50 mA. The device features a capacitance ratio of 10.9 at 0.3 V to 4.7 V, with a series resistance of 0.6 Ω at 470 MHz. It is housed in an SC-79 package and certified for AEC-Q100 automotive qualification.

Feature Summary

• High Q hyperabrupt tuning diode designed for low tuning voltage operation
• Very low capacitance spread ensuring consistent performance
• High capacitance ratio and good C-V linearity

Applications

• Voltage Controlled Oscillators (VCOs) in mobile communications equipment
• Low frequency control elements such as TCXOs
• Low frequency control elements such as VCXOs

Procurement Notes

Verify the component against official Infineon datasheets to confirm electrical parameters and package integrity. Ensure the ordering suffix matches specific requirements. Confirm RoHS compliance and AEC-Q100 automotive qualification status before integration into designs.

Selection Notes

Select this component for applications requiring high Q factors and low capacitance spread. Consider the 15 V reverse voltage limit and 50 mA forward current rating. Verify compatibility with required operating temperatures ranging from -55°C to 150°C.

Part Context

This part belongs to the BBY65 series of silicon tuning diodes. It is specifically engineered for mobile communication systems where precise frequency control is critical. The SC-79 package provides a compact solution for surface mount applications.

Replacement Considerations

Consult official Infineon documentation for verified substitutes. Cross-reference electrical characteristics such as capacitance ratios and series resistance when evaluating alternative components.